Manufacturer Part Number
FDD86567-F085
Manufacturer
onsemi
Introduction
The FDD86567-F085 is a high-performance N-channel MOSFET transistor with advanced PowerTrench technology, designed for automotive and high-power applications.
Product Features and Performance
60V Drain-to-Source Voltage
100A Continuous Drain Current
2mOhm (max) On-Resistance
Wide Operating Temperature Range: -55°C to 175°C
Low Gate Charge: 82nC (max) at 10V
High Power Dissipation: 227W (max)
Fast Switching Characteristics
Product Advantages
Excellent thermal performance and power handling
Optimized for high-efficiency power conversion
Automotive-grade reliability and AEC-Q101 qualified
Suitable for high-power and high-current applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 3.2mOhm (max) at 80A, 10V
Continuous Drain Current (Id): 100A at 25°C (Tc)
Input Capacitance (Ciss): 4950pF (max) at 30V
Power Dissipation (Pd): 227W (max)
Quality and Safety Features
RoHS3 compliant
Automotive-grade quality and reliability
Compatibility
Suitable for a wide range of automotive and industrial applications
Application Areas
Automotive power management
Industrial motor drives
Switch-mode power supplies
Inverters and converters
Product Lifecycle
This product is currently in production and widely available.
Replacements and upgrades may become available in the future as technology evolves.
Several Key Reasons to Choose This Product
High-performance and reliable N-channel MOSFET with advanced PowerTrench technology.
Excellent thermal performance and power handling for high-efficiency power conversion.
Automotive-grade reliability and AEC-Q101 qualification for use in demanding applications.
Wide operating temperature range (-55°C to 175°C) and low on-resistance for efficient power delivery.
Suitable for a variety of high-power and high-current applications, including automotive, industrial, and power electronics.