Manufacturer Part Number
FDD86569-F085
Manufacturer
onsemi
Introduction
High-performance N-channel power MOSFET for automotive and industrial applications
Product Features and Performance
Automotive-grade MOSFET with AEC-Q101 qualification
Low on-resistance of 5.7 mΩ at 80 A and 10 V
High current capability of 90 A continuous drain current at 25°C
Wide operating temperature range of -55°C to 175°C
Low input capacitance of 2520 pF at 30 V
High power dissipation of 150 W
Product Advantages
Excellent performance for high-power automotive and industrial applications
Robust design and reliability for demanding environments
Enables efficient and compact power conversion circuits
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60 V
Gate-to-Source Voltage (Vgs): ±20 V
Threshold Voltage (Vgs(th)): 4 V at 250 A
On-Resistance (Rds(on)): 5.7 mΩ at 80 A, 10 V
Drain Current (Id): 90 A continuous at 25°C
Input Capacitance (Ciss): 2520 pF at 30 V
Power Dissipation (Pd): 150 W
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
Surface mount TO-252AA package
Suitable for a wide range of automotive and industrial power conversion circuits
Application Areas
Automotive electronics
Industrial motor drives
Switch-mode power supplies
Power inverters and converters
Product Lifecycle
This product is an active, high-performance MOSFET device
Replacements and upgrades may be available in the future as technology advances
Key Reasons to Choose This Product
Excellent performance and efficiency for high-power applications
Robust design and reliability for demanding environments
Automotive-grade qualification for mission-critical systems
Compact and easy-to-use surface mount package