Manufacturer Part Number
FDD86540
Manufacturer
onsemi
Introduction
High-performance N-channel power MOSFET device
Designed for high-frequency, high-power switching applications
Product Features and Performance
Fast switching speed
Low on-resistance
High current handling capability
Low gate charge
Low input capacitance
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Excellent power efficiency
Reliable and robust performance
Suitable for high-frequency, high-power switching applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 60V
Maximum Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 4.1mΩ @ 21.5A, 10V
Continuous Drain Current (Id): 21.5A (Ta), 50A (Tc)
Input Capacitance (Ciss): 6340pF @ 30V
Power Dissipation: 3.1W (Ta), 127W (Tc)
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
TO-252-3, DPak (2 Leads + Tab), SC-63 package
Application Areas
High-frequency, high-power switching applications
Power supplies
Motor drives
Inverters
Converters
Product Lifecycle
Currently available
No information on discontinuation or replacements/upgrades
Key Reasons to Choose This Product
Excellent power efficiency and performance
Reliable and robust design
Suitable for high-frequency, high-power switching applications
Wide operating temperature range
Compact and easy-to-use package
FDD86380AMI Semiconductor/onsemi
FDD86580_F085FSC