Manufacturer Part Number
FDD86369-F085
Manufacturer
onsemi
Introduction
This is a single N-channel MOSFET transistor product from onsemi.
Product Features and Performance
80V drain-to-source voltage
Maximum 20V gate-to-source voltage
Very low on-resistance of 7.9mΩ @ 80A, 10V
Capable of handling up to 90A continuous drain current at 25°C
Low input capacitance of 2530pF at 40V
Maximum power dissipation of 150W
54nC gate charge at 10V
Product Advantages
High current handling capability
Extremely low on-resistance for improved efficiency
Wide operating temperature range of -55°C to 175°C
Robust automotive-grade AEC-Q101 qualification
Key Technical Parameters
N-channel MOSFET transistor
TO-252 (D-Pak) surface mount package
Drain-to-source voltage (Vdss) of 80V
Continuous drain current (ID) of 90A at 25°C
On-resistance (RDS(on)) of 7.9mΩ @ 80A, 10V
Gate-to-source voltage (Vgs) of ±20V
Threshold voltage (Vgs(th)) of 4V @ 250A
Input capacitance (Ciss) of 2530pF @ 40V
Gate charge (Qg) of 54nC @ 10V
Quality and Safety Features
RoHS3 compliant
AEC-Q101 automotive-grade qualification
Compatibility
Suitable for use in a wide range of power electronics and motor control applications.
Application Areas
Ideal for use in automotive, industrial, and consumer electronics applications requiring high-power switching.
Product Lifecycle
This product is currently in active production and readily available.
Key Reasons to Choose This Product
Excellent performance characteristics, including extremely low on-resistance and high current handling capability.
Robust automotive-grade design and qualification for reliable operation in demanding environments.
Wide operating temperature range and RoHS3 compliance for versatile application use.
Tape and reel packaging for efficient surface mount assembly.
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