Manufacturer Part Number
FDD86369
Manufacturer
onsemi
Introduction
N-channel power MOSFET transistor designed for high-power, high-efficiency applications
Product Features and Performance
High current handling capability up to 90A continuous drain current at 25°C
Low on-resistance of 7.9mΩ @ 80A, 10V
High switching speed and low gate charge of 54nC @ 10V
Wide operating temperature range of -55°C to 175°C
Suitable for high-power, high-efficiency applications such as motor drives, power supplies, and power conversion
Product Advantages
Excellent thermal performance and power dissipation of up to 150W
Robust design for automotive and industrial applications
Reliable and rugged construction
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 80V
Gate-to-Source Voltage (Vgs): ±20V
Input Capacitance (Ciss): 2530pF @ 40V
RDS(on) (Max): 7.9mΩ @ 80A, 10V
Threshold Voltage (Vgs(th)): 4V @ 250A
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
Suitable for use in a wide range of power electronics and motor drive applications
Application Areas
Motor drives
Power supplies
Power conversion
Industrial and automotive electronics
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options may be available from onsemi
Key Reasons to Choose This Product
High current handling and low on-resistance for efficient power conversion
Robust design and wide operating temperature range for reliability in demanding applications
Proven performance and quality for automotive and industrial use
Compatibility with a variety of power electronics and motor drive systems