FDD86113LZ - onsemi

Manufacturer Part Number

FDD86113LZ

Manufacturer

onsemi

Introduction

High-performance N-channel power MOSFET in a TO-252 package

Product Features and Performance

Supports operating temperatures from -55°C to 150°C

Drain-to-source voltage (Vdss) of 100V

Maximum gate-to-source voltage (Vgs) of ±20V

Very low on-resistance (Rds(on)) of 104mΩ at 4.2A, 10V

Continuous drain current (Id) of 4.2A at 25°C ambient, 5.5A at 25°C case

Input capacitance (Ciss) of 285pF at 50V

Maximum power dissipation of 3.1W at 25°C ambient, 29W at 25°C case

Product Advantages

Excellent thermal performance for high power density applications

Robust design for reliable operation

Optimized for efficient power conversion and control

Key Technical Parameters

N-channel MOSFET technology

Threshold voltage (Vgs(th)) of 3V at 250μA

Gate charge (Qg) of 6nC at 10V

Drive voltage range of 4.5V to 10V

Quality and Safety Features

RoHS3 compliant

TO-252 (D-Pak) surface mount package

Compatibility

Suitable for a wide range of power conversion and control applications

Application Areas

Switching power supplies

Motor drives

Inverters

Industrial and consumer electronics

Product Lifecycle

Currently in production

Replacement or upgraded models may become available in the future

Key Reasons to Choose This Product

High efficiency and power density for compact designs

Excellent thermal management for reliable operation

Robust and reliable design for industrial and consumer applications

Optimized for efficient power conversion and control systems