Manufacturer Part Number
FDD86110
Manufacturer
onsemi
Introduction
High-performance N-channel MOSFET transistor
Designed for power management and control applications
Product Features and Performance
Wide operating temperature range of -55°C to 150°C
Low on-resistance for efficient power delivery
Fast switching speed for high-frequency operation
High drain-to-source voltage rating of 100V
Product Advantages
Excellent thermal characteristics for efficient heat dissipation
Robust design for reliable performance
Compact TO-252 package for space-saving applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 10.2mΩ @ 12.5A, 10V
Continuous Drain Current (Id): 12.5A (Ta), 50A (Tc)
Input Capacitance (Ciss): 2265pF @ 50V
Power Dissipation: 3.1W (Ta), 127W (Tc)
Quality and Safety Features
RoHS3 compliant
Robust design for reliable operation
Compatibility
Suitable for a wide range of power management and control applications
Application Areas
Power supplies
Motor drives
Battery chargers
Switching regulators
Industrial and automotive electronics
Product Lifecycle
Currently in production
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
High efficiency and low power loss due to low on-resistance
Excellent thermal management for reliable operation
Compact and space-saving package design
Robust and reliable performance for demanding applications
Compatibility with a wide range of power management and control systems