Manufacturer Part Number
FDD86102LZ
Manufacturer
onsemi
Introduction
The FDD86102LZ is a high-performance N-channel MOSFET transistor from onsemi, designed for a wide range of power conversion and control applications.
Product Features and Performance
100V drain-to-source voltage (Vdss)
5mOhm maximum on-resistance (Rds(on)) at 8A, 10V
8A continuous drain current (Id) at 25°C ambient temperature (Ta)
35A continuous drain current (Id) at 25°C case temperature (Tc)
1540pF maximum input capacitance (Ciss) at 50V
1W maximum power dissipation at 25°C ambient (Ta), 54W at 25°C case (Tc)
Wide operating temperature range of -55°C to 150°C
Product Advantages
Low on-resistance for improved efficiency
High current handling capability
Small surface-mount package for compact designs
Robust design with high temperature operation
Key Technical Parameters
Drain-to-source voltage (Vdss): 100V
Gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 22.5mOhm @ 8A, 10V
Continuous drain current (Id): 8A (Ta), 35A (Tc)
Input capacitance (Ciss): 1540pF @ 50V
Power dissipation: 3.1W (Ta), 54W (Tc)
Quality and Safety Features
RoHS3 compliant
TO-252AA (DPak) surface-mount package
Compatibility
This MOSFET is compatible with a wide range of power conversion and control applications, including:
Switch-mode power supplies
Motor drives
Lighting ballasts
Industrial controls
Application Areas
Power conversion
Motor control
Lighting systems
Industrial automation
General purpose power switching
Product Lifecycle
The FDD86102LZ is an actively supported product, with no plans for discontinuation. Replacement or upgraded parts may become available in the future as technology evolves.
Key Reasons to Choose This Product
Low on-resistance for high efficiency
High current handling capability
Compact surface-mount package
Wide operating temperature range
Robust design for reliable operation
RoHS3 compliance for environmental responsibility