Manufacturer Part Number
FDD86102
Manufacturer
onsemi
Introduction
The FDD86102 is a high-performance N-channel power MOSFET transistor in a compact TO-252AA package.
Product Features and Performance
100V drain-to-source voltage rating
Low on-resistance of 24mΩ @ 8A, 10V
Wide operating temperature range of -55°C to 150°C
8A continuous drain current at 25°C ambient temperature
36A continuous drain current at 25°C case temperature
Low input capacitance of 1035pF @ 50V
1W power dissipation at 25°C ambient temperature
62W power dissipation at 25°C case temperature
Product Advantages
Excellent performance with low on-resistance and high current handling
Compact and efficient TO-252AA package
Wide operating temperature range suitable for a variety of applications
Optimized for high-efficiency power conversion and control circuits
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 24mΩ @ 8A, 10V
Continuous Drain Current (Id): 8A @ 25°C ambient, 36A @ 25°C case
Input Capacitance (Ciss): 1035pF @ 50V
Power Dissipation: 3.1W @ 25°C ambient, 62W @ 25°C case
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Compatibility
Suitable for a wide range of power electronics and control applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
DC-DC converters
Industrial and consumer electronics
Product Lifecycle
Current product, no indication of discontinuation
Replacements and upgrades may be available
Key Reasons to Choose This Product
Excellent performance with low on-resistance and high current capability
Compact and efficient TO-252AA package
Wide operating temperature range for versatile applications
Reliable and durable construction
Suitable for a variety of power electronics and control applications