BC846BM3T5G - onsemi

Manufacturer Part Number

BC846BM3T5G

Manufacturer

onsemi

Introduction

Low-noise, high-gain, general-purpose NPN bipolar junction transistor (BJT)

Suitable for a wide range of applications, including amplifiers, switches, and logic circuits

Product Features and Performance

High DC current gain (hFE): min. 200 @ 2 mA, 5 V

High transition frequency (fT): 100 MHz

Low collector-emitter saturation voltage (VCE(sat)): max. 600 mV @ 5 mA, 100 mA

Low collector-emitter leakage current (ICEO): max. 15 nA

Wide operating temperature range: -55°C to 150°C

Product Advantages

Reliable and stable performance

Compact surface-mount package (SOT-723)

RoHS-compliant and lead-free

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): max. 65 V

Collector Current (IC): max. 100 mA

Power Dissipation: max. 265 mW

Quality and Safety Features

Stringent quality control and testing procedures

Compliant with RoHS directive (ROHS3)

Compatibility

Suitable for a wide range of electronic circuits and devices

Application Areas

Amplifiers

Switches

Logic circuits

General-purpose electronic applications

Product Lifecycle

This product is an active and widely used component

Replacement or upgrade options are available if needed

Key Reasons to Choose This Product

Reliable and stable performance

Compact surface-mount package

RoHS compliance

Suitable for a wide range of applications

Readily available and supported by the manufacturer