BC846BDW1T1G - onsemi

Manufacturer Part Number

BC846BDW1T1G

Manufacturer

onsemi

Introduction

Dual NPN bipolar junction transistor (BJT) array

Product Features and Performance

2 independent NPN transistors in one package

High current gain (hFE) of 200 minimum

Low collector-emitter saturation voltage (VCE(sat)) of 600mV maximum

High current capability of 100mA maximum collector current

High operating temperature range of -55°C to 150°C

High transition frequency of 100MHz

Product Advantages

Efficient and space-saving dual transistor design

Suitable for various amplifier, switching, and logic circuit applications

Excellent electrical characteristics for reliable performance

Key Technical Parameters

Collector-Emitter Breakdown Voltage (BVCEO): 65V maximum

Collector Cutoff Current (ICBO): 15nA maximum

Power Dissipation: 380mW maximum

Quality and Safety Features

RoHS3 compliant for environmental responsibility

Robust SC-88/SC70-6/SOT-363 surface mount package

Compatibility

Suitable for surface mount assembly

Application Areas

General-purpose amplifier and switching circuits

Logic gates and inverters

Relay and motor driving applications

Product Lifecycle

Active product, no discontinuation planned

Replacement and upgrade options available

Key Reasons to Choose This Product

Excellent electrical performance in a compact dual transistor design

Wide operating temperature range for reliable operation

High current handling capability and transition frequency

RoHS3 compliance for environmental considerations

Surface mount package for efficient board-level integration