BC846BLT3G - onsemi

Manufacturer Part Number

BC846BLT3G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT), Single

Product Features and Performance

RoHS3 Compliant

Surface Mount Packaging (SOT-23-3/TO-236)

Wide Operating Temperature Range: -55°C to 150°C

High Power Capability: 300 mW

High Collector-Emitter Breakdown Voltage: 65 V

High Collector Current: 100 mA

Low Collector Cutoff Current: 15 nA

Low Collector-Emitter Saturation Voltage: 600 mV

High DC Current Gain: 200 (min)

High Transition Frequency: 100 MHz

Product Advantages

Compact Surface Mount Package

Wide Temperature Tolerance

High Power and Voltage Handling

Excellent Electrical Performance

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 65 V

Collector Current: 100 mA

Collector Cutoff Current: 15 nA

Collector-Emitter Saturation Voltage: 600 mV

DC Current Gain: 200 (min)

Transition Frequency: 100 MHz

Quality and Safety Features

RoHS3 Compliant

Compatibility

Compatible with various electronic circuit designs requiring a discrete NPN bipolar junction transistor

Application Areas

Amplifier Circuits

Switching Circuits

Logic Gates

General-Purpose Electronics

Product Lifecycle

Active and readily available

Replacements and upgrades may be available from onsemi or other manufacturers

Key Reasons to Choose

Compact surface mount package

Wide operating temperature range

High power and voltage handling

Excellent electrical performance metrics

RoHS3 compliance for environmental compatibility