Manufacturer Part Number
BC846BLT1G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Transistor
NPN Bipolar Junction Transistor (BJT)
Product Features and Performance
Compact surface mount package (SOT-23-3)
Wide operating temperature range (-55°C to 150°C)
Low collector-emitter saturation voltage (600mV @ 5mA, 100mA)
High DC current gain (200 min @ 2mA, 5V)
High transition frequency (100MHz)
Low collector cutoff current (15nA max)
Withstands up to 65V collector-emitter voltage
Product Advantages
Reliable and durable performance
Efficient power handling
Suitable for high-frequency applications
Compact size for space-constrained designs
Key Technical Parameters
Package: SOT-23-3 (TO-236)
Power Rating: 300mW
Collector-Emitter Breakdown Voltage: 65V
Collector Current: 100mA
Collector Cutoff Current: 15nA
DC Current Gain: 200 min
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Compatibility
Widely compatible with various electronic circuits and applications
Application Areas
Amplifiers
Switches
Logic gates
Driver circuits
General-purpose electronics
Product Lifecycle
Current production model
Availability of replacement or upgrade models
Key Reasons to Choose This Product
Excellent performance characteristics
Compact and efficient design
Reliable and durable construction
Suitable for a wide range of electronic applications
Compatibility with various circuit designs