Manufacturer Part Number
LTC4442IMS8E#PBF
Manufacturer
Analog Devices
Introduction
High performance gate driver for N-Channel MOSFET power management
Product Features and Performance
Half-Bridge Synchronous driver
Dual drivers for N-Channel MOSFETs
Peak output current 2.4A source and sink
Fast rise and fall times (12ns/8ns)
6V to 9.5V supply voltage
High side voltage up to 42V
Product Advantages
Enhanced power efficiency
Low propagation delay
Simplifies bootstrap circuitry
Robust operation under harsh switching conditions
Thermal protection with high ambient temperature operation
Key Technical Parameters
Supply Voltage 6V ~ 9.5V
Current Peak Output 2.4A
High Side Voltage - Max 42V
Rise / Fall Time 12ns/8ns
Operating Temperature -40°C ~ 125°C
Quality and Safety Features
Extended temperature range operation
Industry-standard package and footprint
Integrated under-voltage lockout
Compatibility
Compatible with N-Channel MOSFET gate drive requirements
Standard logic level inputs
Application Areas
Switch mode power supplies
DC-DC converters
Motor controllers and drivers
Power inverters
Product Lifecycle
Active status
No indication of near discontinuation
Options available for future upgrades
Key Reasons to Choose This Product
Efficient driving of high-power N-Channel MOSFETs
Assurance of reliable operation in extended temperatures
Optimal choice for high frequency switching applications
Ability to provide high peak current for effective gate charging
Engineered by an industry-leading manufacturer (Analog Devices)
LTC4441IMSELinear Technology / Analog Devices