Manufacturer Part Number
LTC4446EMS8E#PBF
Manufacturer
Analog Devices
Introduction
High-Performance Gate Driver for N-Channel MOSFETs
Product Features and Performance
Independent Half-Bridge Driver
Dual Driver Configuration
Supports N-Channel MOSFET Gates
2V to 13.5V Supply Voltage Range
Logic Level Thresholds VIL 1.85V, VIH 3.25V
Peak Output Current 2.5A Source, 3A Sink
Non-Inverting Input Type
114V Maximum High Side Voltage (Bootstrap)
Fast Rise Time 8ns
Quick Fall Time 5ns
Product Advantages
Efficient Power Switching
Optimized for Fast Switching Applications
Robust Drive Capability
Enhanced Signal Integrity
Key Technical Parameters
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 7.2V ~ 13.5V
Logic Voltage - VIL, VIH: 1.85V, 3.25V
Current - Peak Output: 2.5A Source, 3A Sink
High Side Voltage - Max: 114 V
Rise / Fall Time: 8ns / 5ns
Quality and Safety Features
Extended Operating Temperature Range -40°C to 85°C
Robust ESD Protection
Compatibility
Surface Mount Technology
8-TSSOP, 8-MSOP Exposed Pad Package Compatibility
Application Areas
Switch Mode Power Supplies
Motor Control Circuits
DC-DC Converters
Power Converters and Inverters
High-Frequency Power Gate Driving
Product Lifecycle
Active
No Indication of Discontinuation
Availability of Replacements or Upgrades Not Specified
Several Key Reasons to Choose This Product
High Efficiency for Power Management Tasks
Ability to Drive High Voltage and High Current Loads
Compatible With High-Frequency Switching
Durable and Reliable for Industrial Applications
Optimal Solution for Compact PCB Design Due to Small Package Size
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