Manufacturer Part Number
LTC4446EMS8E#TRPBF
Manufacturer
Analog Devices
Introduction
The LTC4446EMS8E#TRPBF is a high-performance Power Management (PMIC) gate driver designed for driving N-Channel MOSFETs in a half-bridge configuration.
Product Features and Performance
Independent dual driver channels for flexible half-bridge configurations
Supports N-Channel MOSFETs
Wide supply voltage range of 7.2V to 13.5V
Accepts logic inputs with thresholds of 1.85V (VIL) and 3.25V (VIH)
High peak output currents of 2.5A (source) and 3A (sink)
Fast rise and fall times of 8ns and 5ns respectively
Capable of handling high side voltages up to 114V (bootstrap)
Product Advantages
Enhanced driving capabilities for high-power applications
Provides swift switching performance to improve overall efficiency
Robust high-voltage handling suitable for various industrial applications
Key Technical Parameters
Supply Voltage: 7.2V ~ 13.5V
Logic Voltage VIL, VIH: 1.85V, 3.25V
Current Peak Output (Source, Sink): 2.5A, 3A
High Side Voltage Max (Bootstrap): 114V
Rise / Fall Time (Typ): 8ns, 5ns
Operating Temperature: -40°C ~ 85°C
Quality and Safety Features
Built to operate reliably over industrial temperature ranges
Integrated protections for enhanced operational stability
Compatibility
Suitable for driving various types of N-Channel MOSFETs
Application Areas
Industrial motor drives
Power supply modules
Battery management systems
Renewable energy inverters
Product Lifecycle
Status: Active
Not nearing discontinuation
Continuous production with available replacements and upgrades
Several Key Reasons to Choose This Product
High integration level facilitating reduced component count and system complexity
Exceptional operating temperatures making it suitable for harsh environments
Fast signal propagation times enhance system response
High current capabilities support demanding power applications
Long-term availability assures support throughout product lifecycles
LTC4444IMS8E#TRPBF
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