LTC4446IMS8E#PBF - Analog Devices Inc.

Manufacturer Part Number

LTC4446IMS8E#PBF

Manufacturer

Analog Devices

Introduction

High-performance power management gate driver designed for half-bridge N-channel MOSFETs.

Product Features and Performance

Independent dual drivers

N-Channel MOSFET gate drive capability

Wide operating supply voltage range (7.2V to 13.5V)

Non-inverting input logic

High-side bootstrap voltage up to 114V

Fast rise and fall times (8ns/5ns typical)

Thermal resistance with exposed pad for enhanced heat dissipation

Product Advantages

Efficient power conversion

High-speed operation

Robust drive strength with peak output currents of 2.5A (source), 3A (sink)

Enhanced system reliability

Increased power density

Key Technical Parameters

Supply Voltage: 7.2V to 13.5V

Logic Voltage (VIL, VIH): 1.85V, 3.25V

Output Current (Peak): 2.5A source, 3A sink

High Side Voltage (Max): 114V

Rise/Fall Time: 8ns/5ns

Operating Temperature: -40°C to 85°C

Quality and Safety Features

Built-in under-voltage lockout (UVLO) for enhanced safety

Over-temperature protection

Compatibility

Suitable for driving N-Channel MOSFETs in half-bridge configurations

Application Areas

Motor control

DC-DC power supplies

Synchronous rectification

Class D audio amplifiers

High-efficiency power conversion systems

Product Lifecycle

Active status with ongoing manufacturer support

Long-term availability assured

Several Key Reasons to Choose This Product

Reliable performance under varying conditions

Extended lifespan with built-in protections

Low gate charge to minimize switching losses

Improved power efficiency for greener solutions

Easy integration into various power management applications

Versatile driving configuration catering to a wide range of high-voltage applications

Stable operation through robust thermal management with exposed pad design