The 1N4448 is a high-speed switching diode known for its reliable performance in electronics that require rapid switching. It is manufactured using planar technology, a method that provides stability and efficiency. Encased in a durable, hermetically sealed leaded glass package (SOD27 or DO-35), the diode is well-protected from environmental factors, which extends its usability across various applications. This makes the 1N4448 a popular choice for circuits that demand swift response times and dependable performance.
Technical specifications, features, characteristics, and components with comparable specifications of ON Semiconductor 1N4448
Type | Parameter |
Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
Factory Lead Time | 18 Weeks |
Contact Plating | Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | DO-204AH, DO-35, Axial |
Number of Pins | 2 |
Supplier Device Package | DO-35 |
Weight | 126.01363mg |
Packaging | Bulk |
Published | 2016 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Max Operating Temperature | 175°C |
Min Operating Temperature | -55°C |
Capacitance | 2pF |
Voltage - Rated DC | 100V |
Max Power Dissipation | 500mW |
Current Rating | 200mA |
Base Part Number | 1N4448 |
Polarity | Standard |
Voltage | 75V |
Element Configuration | Single |
Speed | Small Signal =< 200mA (Io), Any Speed |
Current | 2A |
Diode Type | Standard |
Current - Reverse Leakage @ Vr | 5μA @ 75V |
Power Dissipation | 500mW |
Output Current | 200mA |
Voltage - Forward (Vf) (Max) @ If | 1V @ 100mA |
Forward Current | 300mA |
Operating Temperature - Junction | -65°C~175°C |
Max Surge Current | 4A |
Voltage - DC Reverse (Vr) (Max) | 100V |
Current - Average Rectified (Io) | 200mA |
Forward Voltage | 1V |
Max Reverse Voltage (DC) | 100V |
Average Rectified Current | 200mA |
Reverse Recovery Time | 4 ns |
Peak Reverse Current | 5μA |
Max Repetitive Reverse Voltage (Vrrm) | 100V |
Capacitance @ Vr, F | 2pF @ 0V 1MHz |
Peak Non-Repetitive Surge Current | 4A |
Max Forward Surge Current (Ifsm) | 4A |
Recovery Time | 4 ns |
Max Junction Temperature (Tj) | 175°C |
Height | 1.91mm |
Length | 4.56mm |
Width | 1.91mm |
REACH SVHC | No SVHC |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
The 1N4448 uses a DO-35 (DO-204AH) case, providing a compact and robust design that suits a wide range of circuit layouts.
This diode is lightweight, approximately 125 mg, making it a suitable choice for small, weight-sensitive applications.
The cathode band is marked with black, giving you an easy visual reference to identify polarity during installation.
The 1N4448 is available in different packaging options: TR/10K per 13" reel, accommodating 50K per box, and TAP/10K per ammo pack, also supporting 50K per box. This flexibility allows you to select the most convenient option for your production needs.
This diode is available in both DO-35 glass and surface-mount (SMD) packages, providing flexibility depending on the design needs of your circuit. Whether you’re working with traditional through-hole mounts or more compact SMD configurations, the 1N4448 offers versatility.
As a silicon epitaxial fast-switching diode, the 1N4448 is built for speed and efficiency. The epitaxial layer helps it handle rapid voltage changes more smoothly, which enhances its suitability in circuits requiring high-speed switching.
With a maximum repetitive reverse voltage of 100 volts, this diode can handle significant reverse voltages. This feature makes it effective in protecting sensitive parts of the circuit from voltage that could otherwise disrupt function or cause damage.
The 1N4448 has a maximum average rectified current rating of 15A or 150mA, enabling it to handle moderate current loads effectively. This makes it suitable for circuits with continuous current demands, offering stability and reliability.
Able to dissipate up to 5W of power, the 1N4448 reduces risks of overheating, which is crucial in high-power or continuous-operation circuits. This ability to handle power dissipation extends its life and helps maintain performance over time.
Rated for 75V in reverse voltage, this diode provides additional resilience against reverse bias conditions. This capability can protect components in circuits with fluctuating voltages or environments prone to voltage spikes.
The 1N4448 operates within a wide temperature range of -65°C to +175°C. This tolerance means it can perform reliably in both low and high-temperature environments, making it a versatile option for various electronic applications, from consumer devices to industrial systems.
• 1N4150
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With its high-speed switching capability, the 1N4448 can effectively operate in circuits that require quick response times. This is particularly valuable in applications like signal processing and timing circuits where rapid switching can improve performance.
The diode’s reliable on/off switching capability also makes it suitable for general switching purposes, allowing you to use it in a variety of circuit designs. Its stable performance ensures consistent operation, making it ideal for systems that need steady switching.
The 1N4448 is well-suited for rectification, a process of converting AC to DC, which is a common requirement in power supplies. Its efficient rectification ability provides stable DC output, making it essential for circuits where a steady DC current is needed.
In circuits that require an added layer of protection, the 1N4448 can block sudden voltage spikes, helping to safeguard sensitive components. This feature is especially useful in environments with fluctuating voltage levels, reducing the risk of component failure.
The 1N4448 can also effectively block voltage where it’s not needed, which is helpful in circuits that require controlled voltage flow. This blocking capability makes it suitable for applications that need precise voltage control.
In signal processing circuits, the 1N4448 can filter unwanted signals, ensuring that only the desired signals are processed. Its ability to filter effectively makes it valuable in communication systems and other electronics where signal clarity is essential for overall performance.
The 1N4448 diode is versatile and can be used across a range of applications. Its design allows it to perform well in tasks like converting alternating current (AC) to direct current (DC) and blocking unexpected voltage spikes. These characteristics make it ideal for protecting components from damage and ensuring smooth operation. It’s also commonly used in digital logic circuits, battery chargers, power supplies, and voltage doubling circuits, making it a flexible choice for various electronics setups.
When comparing the 1N4448 and 1N4148, both are built for general-purpose switching, but the 1N4448 can handle a higher current of up to 500mA, whereas the 1N4148 manages around 200mA. Despite the current-handling difference, their forward voltage under load remains nearly identical, both capping at around 1 Volt. The main difference lies in the 1N4448’s increased tolerance for current, which provides an advantage in circuits requiring slightly more robustness. However, both diodes share similar design and fabrication processes, making them close equivalents in many ways.
The parts on the right have specifications similar to the ON Semiconductor 1N4448
Parameter / Part Number | 1N4448 | 1N4151TR | 1N4148TR |
Manufacturer | ON Semiconductor | Vishay Semiconductor Diodes.. | ON Semiconductor |
Mount | Through Hole | Through Hole | Through Hole |
Package / Case | DO-204AH, DO-35, Axial | DO-204AH, DO-35, Axial | DO-204AH, DO-35, Axial |
Forward Voltage | 1 V | 1 V | 1 V |
Average Rectified Current | 200 mA | 200 mA | 200 mA |
Current - Average Rectified | 200 mA | - | - |
Reverse Recovery Time | 4 ns | 4 ns | 4 ns |
Recovery Time | 4 ns | 4 ns | 4 ns |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
ON Semiconductor, the manufacturer of the 1N4448, is recognized for its innovations in energy-efficient technology. Their products cater to a range of industries, including automotive, communications, computing, and LED lighting, among others. By focusing on efficient power and signal management solutions, ON Semiconductor aims to support designers in creating reliable and cost-effective systems. Their established supply chain and high-quality standards make them a dependable choice for engineers worldwide, ensuring consistency and performance across their product lineup.
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The 1N4448 switching diode is commonly used in low-voltage circuits that need fast switching and efficient rectification. It’s also effective as a protection device, blocking reverse current and protecting sensitive components, such as microcontrollers, from damage due to unexpected current flow.
The 1N4448 diode has a maximum voltage rating of 100 volts for repetitive peak reverse voltage. This means it can handle up to 100 volts in reverse bias without sustaining damage, making it reliable for circuits exposed to occasional voltage spikes.
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