on November 14th 55

All About the IRF530 MOSFET

The IRF530, a robust N-channel MOSFET, stands out in the power electronics domain for its low input capacitance and reduced gate charge, enhancing its high-speed switching and power management efficiency. Ideal for applications like power supplies, motor controls, and voltage regulation, the IRF530 provides reliable performance by minimizing power loss and thermal stress, which boosts system durability. This article digs into the IRF530’s specifications, pin configuration, technical benefits, and diverse applications, offering insights for you seeking optimized performance in demanding environments.

Catalog

IRF530 Overview

The IRF530, a state-of-the-art N-channel MOSFET, garners attention in today's power electronics landscape by optimizing reduced input capacitance and gate charge. This attribute enhances its suitability as a primary switch in sophisticated high-frequency isolated DC-DC converters. With a growing need for effective energy management, telecom, and computing systems increasingly rely on the IRF530 to facilitate their dynamic operations.

Harnessing a legacy of advancements in semiconductor technology, the IRF530 provides a trustworthy option for individuals aspiring to boost performance while minimizing energy expenditure. It excels in curbing power loss through superior switching capabilities, which fosters integrated devices' longevity and stability.

The IRF530's meticulously crafted design specifications cater to environments with rigorous energy efficiency demands, such as telecom infrastructures and computing hardware. You can value its capacity to consistently offer reliable output, even in high-stress scenarios. This becomes major in data centers, where striking a balance in thermal management poses a notable challenge.

Pin Configuration

CAD Model

Symbol

Footprints

3D Visualization

Features

Feature	Specification
Transistor Type	N Channel
Package Type	TO-220AB and Other Packages
Max Voltage Applied (Drain-Source)	100 V
Max Gate-Source Voltage	±20 V
Max Continuous Drain Current	14 A
Max Pulsed Drain Current	56 A
Max Power Dissipation	79 W
Minimum Voltage to Conduct	2 V to 4 V
Max On-State Resistance (Drain-Source)	0.16 Ω
Storage & Operating Temperature	-55°C to +175°C

Benefits of Applying the IRF530

Parameter	Description
Typical RDS(on)	0.115 Ω
Dynamic dV/dt rating	Yes
Avalanche rugged technology	Enhanced durability in high-stress conditions
100% avalanche tested	Fully tested for reliability
Low gate charge	Requires minimal drive power
High current capability	Suitable for high current applications
Operating temperature	175 °C maximum
Fast switching	Quick response for efficient operation
Ease of paralleling	Simplifies design with parallel MOSFETs
Simple drive requirements	Reduces complexity in drive circuitry

Technical Specifications

Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	14A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Number of Elements	1
Power Dissipation (Max)	60W Tc
Turn Off Delay Time	32 ns
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	STripFET™ II
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Voltage - Rated DC	100V
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Current Rating	14A
Time @ Peak Reflow Temperature - Max (s)	NOT SPECIFIED
Base Part Number	IRF5
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	60W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	160mΩ @ 7A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	458pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	21nC @ 10V
Rise Time	25ns
Vgs (Max)	±20V
Fall Time (Typ)	8 ns
Continuous Drain Current (ID)	14A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current - Max (IDM)	56A
Avalanche Energy Rating (Eas)	70 mJ
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead

Alternatives to the IRF530

Part Number	Description	Manufacturer
IRF530F	Power Field-Effect Transistor, 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	International Rectifier
IRF530	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	Thomson Consumer Electronics
IRF530PBF	Power Field-Effect Transistor, 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	International Rectifier
IRF530PBF	Power Field-Effect Transistor, 14A (ID), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3	Vishay Intertechnologies
SIHF530-E3	Transistor 14A, 100V, 0.16ohm, N-Channel, Si, Power, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN, FET General Purpose Power	Vishay Siliconix
IRF530FX	Power Field-Effect Transistor, 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	Vishay Intertechnologies
IRF530FXPBF	Power Field-Effect Transistor, 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	Vishay Intertechnologies
SIHF530	Transistor 14A, 100V, 0.16ohm, N-Channel, Si, Power, MOSFET, TO-220AB, TO-220, 3 PIN, FET General Purpose Power	Vishay Siliconix
IRF530FP	10A, 600V, 0.16ohm, N-CHANNEL, Si, Power, MOSFET, TO-220FP, 3 PIN	STMicroelectronics

IRF530 Evaluation Circuit Examination

Unclamped Inductive Load

Switching Time with Resistive Load

Gate Charge Evaluation

Applications

Power Supply Systems

The IRF530 excels in environments with high current demands, making it exceptionally suitable for uninterruptible power supplies (UPS). Its proficiency in managing rapid switching actions enhances both efficiency and reliability. In actual scenarios, leveraging this MOSFET's capabilities helps avoid power interruptions and maintain stability during unforeseen outages, an aspect you cherish as you aim to safeguard basic operations.

Actuation Mechanisms

In solenoid and relay applications, the IRF530 is highly beneficial. It precisely manages voltage spikes and the flow of current, ensuring accurate activation in industrial systems. You can skilled in mechanical actuation and appreciate these qualities to boost machinery responsiveness and extend operational lifespan.

Voltage Regulation and Conversion Technologies

The IRF530 is a formidable component for voltage regulation and both DC-DC and DC-AC conversions. Its role in optimizing power conversion is invaluable, especially in renewable energy systems where efficiency can significantly amplify power output. You can often dig into the subtleties of voltage modulation to enhance conversion effectiveness and foster system durability.

Motor Control Applications

Within motor control applications, the IRF530 is requisite. Its range spans from electric vehicles to manufacturing robotics, facilitating precise speed modulation and torque management. You can frequently deploy this component, leveraging its rapid-switching traits to bolster performance while conserving energy.

Audio Amplification and Automotive Electronics

In audio systems, the IRF530 minimizes distortion and manages thermal output, ensuring sound signals are both clear and amplifiable. In automotive electronics, it handles basic functions like fuel injection, braking systems such as ABS, airbag deployment, and lighting control. You can refine these applications, crafting vehicles that are both safer and more responsive.

Battery Management and Renewable Energy Systems

The IRF530 proves used in battery charging and management, underpinning efficient energy allocation and storage. In solar power installations, it mitigates fluctuations and maximizes energy capture, resonating with sustainable energy objectives. In energy management, you can capitalize on these capabilities to optimize battery longevity and enhance system integration.

Packaging Insights of the IRF530

IRF530 Package Design

Mechanical Specifications of the IRF530

Manufacturer

STMicroelectronics is a leader in the semiconductor sphere, harnessing its deep-rooted knowledge of silicon technology and advanced systems. This expertise, combined with a substantial bank of intellectual property, propels innovations in System-on-Chip (SoC) technology. As a key entity within the ever-evolving domain of microelectronics, the company acts as a catalyst for both transformation and progress.

By capitalizing on its extensive portfolio, STMicroelectronics consistently ventures into a new domain of chip design, blurring the lines between possibility and reality. The company's unwavering dedication to research and development fuels the seamless integration of complex systems into streamlined, efficient SoC solutions. These solutions serve multiple industries, including automotive and telecommunications.

The company showcases a strategic focus on crafting industry-specific solutions, reflecting a strong awareness of the distinct demands and hurdles facing various sectors as they navigate swiftly changing technological terrains. Their relentless pursuit of innovation and commitment to sustainability find expression in the ongoing development of new solutions. These efforts are dedicated to producing more energy-efficient and resilient technologies, emphasizing the value of adaptability in retaining a competitive edge.

Datasheet PDF

IRF530 Datasheets:

IRF530.pdf

IRF530PBF Datasheets:

IRF530.pdf