on November 5th 55

All About the 1N5822 Schottky Diode

The 1N5822 Schottky diode is a versatile and highly efficient component recognized for its exceptionally low forward voltage drop. This feature is especially valuable in applications that demand swift switching and energy efficiency, such as in power supply units, renewable energy systems, and portable electronics. As modern electronic designs emphasize reduced power loss and improved sustainability, the 1N5822 has become a preferred choice for engineers aiming to enhance system performance while minimizing energy waste. In this article, we will explore the 1N5822's key features, practical applications, and advantages in various electronic circuits, highlighting how its unique characteristics support advancements in energy-efficient technology.

Catalog

1N5822 Overview

The 1N5822 is a Schottky diode renowned for its exceptionally low forward voltage drop, making it a favorable choice for applications that require quick switching at reduced current levels. This offers an advantage in Switch Mode Power Supplies and high-frequency DC-to-DC converters, where efficiency can impact overall system performance. Encased in a DO-201AD package, this diode is frequently utilized in low-voltage and high-frequency operations, including uses such as low-voltage inverters, freewheeling applications, polarity protection, and sleek battery chargers. Its capability to transition states with ease ensures minimized energy loss, thereby enhancing the efficiency of systems relying on it.

In practical applications, the 1N5822's design excels in its ability to manage thermal dissipation, which is often a challenge in compact systems that demand high efficiency. This construction allows it to function dependably across varied conditions, making it a preferred choice for prototypes that require steady performance in changing environments. The diode’s low forward voltage is instrumental in aiding power preservation, which is mostly beneficial for maintaining energy in portable electronic devices.

From an analytical perspective, while the 1N5822 shines in low-voltage scenarios, it is basic to ensure that the entire circuitry exploits the benefits of its low-forward voltage drop. Thoughtfully aligning the diode's attributes with the system's other components can substantially uplift the device’s performance and durability. Exploring deeper into the design efficiencies may uncover further strategies to fully exploit this component’s potential in cutting-edge applications.

Pin Configuration

Pin Name	Description
Anode	Current always enters through anode
Cathode	Current always exits through cathode

1N5822 CAD Insights

Symbol

Footprint

3D Visualization

Features

Feature	Description
Very Small Conduction Losses	Reduces energy loss during conduction
Negligible Switching Losses	Minimizes losses during switching
Extremely Fast Switching	Allows rapid transitions
Low Forward Voltage Drop	Provides lower power loss
Avalanche Capability Specified	Withstands high voltage conditions
Guard Ring for Overvoltage Protection	Protects against overvoltage damage
High Forward Surge Capability	Handles high current surges
High Frequency Operation	Suitable for high-frequency applications
Solder Dip 275 °C Max. 10 s, per JESD 22-B106	Ensures durability in soldering processes

Technical Specifications

Type	Parameter
Factory Lead Time	6 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	DO-201AD, Axial
Number of Pins	2
Weight	4.535924g
Diode Element Material	SILICON
Number of Elements	1
Packaging	Tape & Box (TB)
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Max Operating Temperature	150°C
Min Operating Temperature	-65°C
Applications	POWER
Additional Feature	FREE WHEELING DIODE
HTS Code	8541.10.00.80
Capacitance	190pF
Voltage - Rated DC	40V
Terminal Form	WIRE
Current Rating	3A
Base Part Number	1N58
Pin Count	2
Polarity	Standard
Element Configuration	Single
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Diode Type	Schottky
Current - Reverse Leakage @ Vr	2mA @ 40V
Output Current	3A
Voltage - Forward (Vf) (Max) @ If	525mV @ 3A
Case Connection	ISOLATED
Forward Current	3A
Max Reverse Leakage Current	2mA
Operating Temperature - Junction	150°C Max
Max Surge Current	80A
Forward Voltage	525mV
Max Reverse Voltage (DC)	40V
Average Rectified Current	3A
Number of Phases	1
Peak Reverse Current	2mA
Max Repetitive Reverse Voltage (Vrrm)	40V
Peak Non-Repetitive Surge Current	80A
Max Forward Surge Current (Ifsm)	80A
Max Junction Temperature (Tj)	150°C
Height	5.3mm
Length	9.5mm
Width	5.3mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

Alternatives

Part Number	Description	Manufacturer
SR304HA0 DIODES	RECTIFIER DIODE	Taiwan Semiconductor Manufacturing Company Limited
SR304HB0 DIODES	RECTIFIER DIODE	Taiwan Semiconductor Manufacturing Company Limited
SR340 DIODES	Rectifier Diode	Changzhou Starsea Electronics Co Ltd
SR304A0 DIODES	3A, 40V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2	Taiwan Semiconductor Manufacturing Company Limited
SR304HX0 DIODES	RECTIFIER DIODE	Taiwan Semiconductor Manufacturing Company Limited
1N5822_R2_00001	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V (VRRM), Silicon, DO-201AD	PanJit Semiconductor
1N5822_AY_00001	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V (VRRM), Silicon, DO-201AD	PanJit Semiconductor
SR304X0G DIODES	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V (VRRM), Silicon, DO-201AD, GREEN, PLASTIC PACKAGE-2	Taiwan Semiconductor Manufacturing Company Limited
1N5822_AY_10001	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V (VRRM), Silicon, DO-201AD	PanJit Semiconductor
1N5822-T3	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V (VRRM), Silicon, DO-201AD, PLASTIC PACKAGE-2	Sangdest Microelectronics (Nanjing) Co Ltd

How to Integrate the 1N5822 Diode?

In contemporary electronic frameworks, the 1N5822 Schottky diode plays dynamic roles due to its characteristics like low forward voltage drop and rapid switching capabilities, shaping its suitability for low-voltage and energy-saving tasks. These features contribute significantly to applications involving power rectification, voltage clamping, and protection circuits by minimizing power loss and heat generation. Handling high current densities with minimal energy loss can greatly influence circuit performance, prompting careful considerations in design approaches.

The following circuit illustrates the forward biasing of the 1N5822 diode to activate an LED powered by a 3.7V battery, showcasing its effectiveness in low-voltage scenarios. Schottky diodes are favored for maintaining input voltage levels and reducing energy dissipation across the diode, thus fostering longer battery life and optimal LED performance. Embracing factors like thermal management and load conditions are used when using Schottky diodes. Adequate heat dissipation is manageable through suitable heat sinks or thermal pads. Selecting a diode with a current rating that matches the circuit's demands helps avoid premature breakdowns and boosts reliability. Incorporating these strategies elevates circuit resilience and prolongs component durability.

Maximizing the benefits of the 1N5822 requires thoughtful circuit integration with precision. Situating the diode close to the power supply lessens line losses, enhancing circuit efficiency. Configuring feedback mechanisms to adapt biasing conditions fluidly can optimize performance under diverse operational scenarios. Schottky diodes are instrumental in systems demanding fast switching and low forward voltage, such as switch-mode power supplies (SMPS) and high-frequency applications, due to their proficiency in curbing switching losses.

Application Areas for 1N5822

Low Voltage, High-Frequency Inverters

Inverters operating at low voltage and high frequency are heavily dependent on efficient components to reduce power losses. The 1N5822 diode stands out due to its low forward voltage drop and rapid recovery features. These characteristics can significantly enhance energy efficiency and reliability, mainly valuable in portable electronic devices where conserving energy is a priority.

Freewheeling Applications

Freewheeling circuits aim to offer an alternative current path when the main switch is open. The 1N5822 diode excels here, helping mitigate energy losses and suppress voltage spikes, thus ensuring circuit stability. You can find that using the 1N5822 provides better protection against transient voltages, and extends the lifespan of your equipment while producing wind turbines and other renewable energy systems.

DC/DC Converters

DC/DC converters gain substantially from the 1N5822's quick switching capabilities and low power dissipation. Integrating this diode leads to higher efficiency and improved voltage regulation. You can note that its robust performance helps to minimize heat buildup—a needed feature in densely packed circuit boards commonly found in contemporary electronic devices.

Signal Detection

In the world of signal detection, diodes like the 1N5822 are prized for their responsive characteristics, enhancing the detection accuracy of weak signals in RF circuits. This improves digital communication by enabling more reliable signal reception even with fluctuating strengths.

Polarity Protection Applications

Polarity protection safeguards electronic equipment from accidental reverse polarity connections. The 1N5822 diode offers a straightforward and effective solution, leading to a noticeable decrease in component failure rates. Such results emphasize its value in creating robust circuit designs.

RF Applications

RF applications demand reduced noise interference and enhanced signal clarity. The 1N5822 diode supports these requirements by minimizing signal distortion. You can appreciate that incorporating this diode leads to improved performance in high-fidelity audio and communication systems, where precise signal management is used.

Fast-Switching Logic Circuits

Logic circuits requiring fast-switching components benefit from the 1N5822's rapid switching times. Using this diode, circuits achieve faster response times, dangerous in high-speed computing and data processing. Industry leaders suggest that incorporating the 1N5822 can enhance the overall speed and efficiency of computing systems.

Switched-Mode Power Supplies

Switched-mode power supplies (SMPS) require high efficiency and reliability. The 1N5822 diode significantly reduces energy loss during operation and enhances thermal performance, active for the longevity of power supply components. You can regard the diode as instrumental in boosting SMPS energy efficiency, solidifying its role in modern power management solutions.

Package

1N5822 Package Outline

1N5822 Mechanical Data

REF.	DIMENSIONS				Notes
	Millimeters		Inches
	Min.	Max.	Min.	Max.	1. The lead diameter ▲ D is not controlled over zone E. 2. The minimum axial length within which the device may be placed with its leads bent at right angles is 0.59" (15 mm)
A		9.50		0.374
B	25.40		1000
▲ C		5.30		0.209
▲ D		1.30		0.051
E		1.25		0.049

Manufacturer of 1N5822

STMicroelectronics has positioned itself as a leading player on the global semiconductor stage. The company is known for its exceptional ability to craft advanced silicon and system solutions. By propelling advancements in System-on-Chip (SoC) technology, they have made notable contributions to the evolution of modern electronics.

Through its dedication to research and development, STMicroelectronics has refined designs for System-on-Chip by integrating various functional components into a single chip. This innovation offers not just enhanced efficiency and cost reduction but also impacts a wide array of products, spanning consumer electronics and automotive systems. The prowess they display in this arena indicates their dedication to pushing technological boundaries and ingenuity.

Datasheet PDF

1N5822 Datasheets:

1N582x.pdf