Manufacturer Part Number
SUM110P06-07L-E3
Manufacturer
Vishay / Siliconix
Introduction
High-performance P-channel power MOSFET with low on-resistance
Product Features and Performance
60V Drain-to-Source Voltage
110A Continuous Drain Current
9mΩ On-Resistance
11400pF Input Capacitance
345nC Gate Charge
-55°C to 175°C Operating Temperature Range
Product Advantages
Trench MOSFET technology for low on-resistance
Ideal for high-current, high-speed switching applications
Robust and reliable performance
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
Maximum Gate-to-Source Voltage (Vgs max): ±20V
On-Resistance (Rds(on)): 6.9mΩ
Continuous Drain Current (Id): 110A
Input Capacitance (Ciss): 11400pF
Gate Charge (Qg): 345nC
Quality and Safety Features
RoHS3 compliant
TO-263 (DPak) package for surface mount
Compatibility
Compatible with various high-current, high-speed switching applications
Application Areas
Power supplies
Motor drives
Voltage regulators
DC/DC converters
Brushless DC (BLDC) motor control
Product Lifecycle
Current production model, no discontinuation plans
Several Key Reasons to Choose This Product
Excellent performance with low on-resistance and high current handling
Trench MOSFET technology for improved efficiency and reliability
Wide operating temperature range (-55°C to 175°C)
Robust and compact TO-263 (DPak) package
Suitable for various high-power, high-speed switching applications