Manufacturer Part Number
SUM110N10-09-E3
Manufacturer
Vishay / Siliconix
Introduction
High-power N-channel enhancement-mode TrenchFET power MOSFET suitable for a wide range of power conversion and control applications.
Product Features and Performance
Trench MOSFET technology for low on-resistance and high-power density
High drain current capability up to 110A at 25°C case temperature
Low on-resistance down to 9.5mΩ
High blocking voltage up to 100V
Wide operating temperature range from -55°C to 175°C
Fast switching speed
Low gate charge for efficient control
Product Advantages
Excellent performance-to-cost ratio
High power density and efficiency
Reliable and robust design
Suitable for a wide range of power conversion and control applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 9.5mΩ @ 30A, 10V
Drain Current (Id): 110A @ 25°C case temperature
Input Capacitance (Ciss): 6700pF @ 25V
Power Dissipation (Pd): 3.75W @ 25°C ambient, 375W @ 25°C case
Quality and Safety Features
RoHS3 compliant
Reliable and durable design
Compatibility
Suitable for various power conversion and control applications, such as motor drives, power supplies, and power amplifiers.
Application Areas
Power conversion and control applications
Motor drives
Power supplies
Power amplifiers
Product Lifecycle
This product is currently in production and widely available.
Vishay regularly updates and improves its TrenchFET portfolio, so newer or more advanced versions may become available in the future.
Key Reasons to Choose This Product
High power density and efficiency
Excellent performance-to-cost ratio
Reliable and robust design
Wide operating temperature range
Suitable for a variety of power conversion and control applications