Manufacturer Part Number
SUM110N06-3M9H-E3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel power MOSFET in a TO-263 (DPak) package
Product Features and Performance
Optimized trench MOSFET technology for low on-resistance
Extremely low on-resistance of 3.9 mOhm @ 30 A, 10 V
Continuous drain current of 110 A at 25°C case temperature
Maximum drain-to-source voltage of 60 V
Fast switching characteristics
Suitable for high-frequency, high-power switching applications
Product Advantages
Industry-leading low on-resistance for improved efficiency
High current handling capability
Compact and thermally efficient TO-263 (DPak) package
Suitable for high-frequency, high-power switching applications
Key Technical Parameters
Drain-to-source voltage (Vdss): 60 V
Gate-to-source voltage (Vgs): ±20 V
On-resistance (Rds(on)): 3.9 mOhm @ 30 A, 10 V
Continuous drain current (Id): 110 A at 25°C case temperature
Input capacitance (Ciss): 15800 pF @ 25 V
Power dissipation: 3.75 W at 25°C ambient, 375 W at 25°C case
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Designed for high-frequency, high-power switching applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
High-power audio amplifiers
Automotive electronics
Product Lifecycle
This product is currently in production and is not nearing discontinuation.
Replacement or upgrade options may be available, but this should be verified with the manufacturer.
Key Reasons to Choose This Product
Industry-leading low on-resistance for improved efficiency
High current handling capability for demanding applications
Compact and thermally efficient TO-263 (DPak) package
Suitable for high-frequency, high-power switching applications
RoHS3 compliant for environmental compliance
Proven reliability and performance in high-reliability applications
SUM110N06-3m4LElectro-Films (EFI) / Vishay