Manufacturer Part Number
SUM110P04-04L-E3
Manufacturer
Vishay / Siliconix
Introduction
High-performance P-channel enhancement-mode power MOSFET
Product Features and Performance
Optimized for high-frequency, high-current switching applications
Low on-resistance for low conduction losses
Low gate charge for fast switching
Trench technology for small footprint
Wide temperature range of -55°C to 175°C
Product Advantages
Efficient power management
Compact design
Wide operating temperature range
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 40V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 4.2mΩ @ 30A, 10V
Drain Current (Id): 110A (Tc)
Input Capacitance (Ciss): 11200pF @ 25V
Power Dissipation: 3.75W (Ta), 375W (Tc)
Quality and Safety Features
RoHS3 compliant
Trench MOSFET technology for reliability
Compatibility
Compatible with a wide range of power management and switching applications
Application Areas
High-frequency, high-current switching applications
Power supplies
Motor drives
Inverters
Converters
Product Lifecycle
Currently available
No information on discontinuation or replacement
Key Reasons to Choose This Product
High efficiency with low on-resistance
Fast switching with low gate charge
Wide operating temperature range
Compact and reliable trench MOSFET design
Suitable for a variety of power management and switching applications