Manufacturer Part Number
SUD20N10-66L-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance power MOSFET transistor with low on-resistance and fast switching
Product Features and Performance
Trench MOSFET structure for low on-resistance
Voltage rating of 100V
Continuous drain current up to 16.9A at 25°C
Ultra-low on-resistance of 66mΩ at 10V gate-source voltage
Fast switching with gate charge of 30nC at 10V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent efficiency and performance
Compact and space-saving design
Reliable and durable construction
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 66mΩ
Continuous Drain Current (Id): 16.9A
Input Capacitance (Ciss): 860pF
Power Dissipation: 2.1W (Ta), 41.7W (Tc)
Quality and Safety Features
RoHS3 compliant
Robust TO-252 packaging
Compatibility
Compatible with a wide range of power electronics and power conversion applications
Application Areas
Power supplies
Motor drives
Switching regulators
Inverters
Industrial and consumer electronics
Product Lifecycle
Current product, no discontinuation planned. Replacements and upgrades available as needed.
Key Reasons to Choose
Excellent power efficiency and performance
Compact and space-saving design
Reliable and durable construction
Wide operating temperature range
RoHS3 compliance for environmental compatibility