Manufacturer Part Number
SUD19P06-60-E3
Manufacturer
Vishay / Siliconix
Introduction
This product is a discrete semiconductor device, specifically a P-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor).
Product Features and Performance
Trench MOSFET technology
Operating temperature range of -55°C to 150°C (TJ)
Drain-to-Source Voltage (Vdss) of 60V
Maximum Gate-to-Source Voltage (Vgs) of ±20V
Low On-State Resistance (Rds(on)) of 60mΩ @ 10A, 10V
Continuous Drain Current (Id) of 18.3A @ 25°C (Tc)
Input Capacitance (Ciss) of 1710pF @ 25V
Power Dissipation of 2.3W (Ta) and 38.5W (Tc)
Gate Charge (Qg) of 40nC @ 10V
Product Advantages
Efficient Trench MOSFET technology
Wide operating temperature range
Low on-state resistance for low power loss
High current handling capability
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
Maximum Gate-to-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 60mΩ @ 10A, 10V
Continuous Drain Current (Id): 18.3A @ 25°C (Tc)
Input Capacitance (Ciss): 1710pF @ 25V
Power Dissipation: 2.3W (Ta), 38.5W (Tc)
Gate Charge (Qg): 40nC @ 10V
Quality and Safety Features
ROHS3 compliant
TO-252AA package (DPak)
Compatibility
Surface mount package
Suitable for various electronic applications
Application Areas
Switching power supplies
Motor drives
Lighting controls
Industrial and consumer electronics
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available from Vishay/Siliconix or other manufacturers.
Key Reasons to Choose This Product
Efficient Trench MOSFET technology for low power loss
Wide operating temperature range for versatile applications
High current handling capability for demanding requirements
Low on-state resistance for improved energy efficiency
Compact and reliable TO-252AA package