SUD19N20-90-E3 - Vishay Siliconix

Manufacturer Part Number

SUD19N20-90-E3

Manufacturer

Vishay / Siliconix

Introduction

High-performance N-channel TrenchFET power MOSFET

Product Features and Performance

Extremely low on-resistance

Fast switching speed

High power efficiency

High current handling capability

Reliable and robust design

Product Advantages

Excellent thermal performance

High power density

Suitable for high-frequency applications

Efficient power conversion

Key Technical Parameters

Drain to Source Voltage (Vdss): 200 V

Vgs (Max): ±20 V

Rds On (Max) @ Id, Vgs: 90 mOhm @ 5 A, 10 V

Current Continuous Drain (Id) @ 25°C: 19 A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V

Power Dissipation (Max): 3 W (Ta), 136 W (Tc)

Vgs(th) (Max) @ Id: 4 V @ 250 A

Drive Voltage (Max Rds On, Min Rds On): 6 V, 10 V

Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V

Quality and Safety Features

RoHS3 compliant

Reliable and robust design

Compatibility

Surface mount package (TO-252AA)

Compatible with a wide range of power electronics applications

Application Areas

Switching power supplies

Motor drives

Inverters

Power amplifiers

Industrial and consumer electronics

Product Lifecycle

Current product offering

Availability of replacements or upgrades may vary, please check with manufacturer

Key Reasons to Choose This Product

Exceptional performance in terms of low on-resistance, fast switching speed, and high current handling

Efficient power conversion and high power density

Suitable for high-frequency applications

Reliable and robust design

RoHS3 compliance for environmental responsibility