Manufacturer Part Number
SUD23N06-31-GE3
Manufacturer
Vishay / Siliconix
Introduction
The SUD23N06-31-GE3 is a N-Channel MOSFET transistor from Vishay/Siliconix's TrenchFET series.
Product Features and Performance
60V Drain-to-Source Voltage
31mΩ On-Resistance @ 15A, 10V
4A Continuous Drain Current @ 25°C
670pF Input Capacitance @ 25V
7W Power Dissipation @ 25°C, 31.25W @ 100°C
Operating Temperature Range: -55°C to 150°C
Product Advantages
Low on-resistance for efficient power conversion
High current handling capability
Suitable for high-frequency, high-power applications
Compact TO-252 surface-mount package
Key Technical Parameters
N-Channel MOSFET
Vds: 60V, Vgs: ±20V
Rds(on): 31mΩ @ 15A, 10V
Id(cont): 21.4A @ 25°C
Ciss: 670pF @ 25V
Qg: 17nC @ 10V
Quality and Safety Features
RoHS3 compliant
Qualified to AEC-Q101 standard for automotive applications
Compatibility
Compatible with a wide range of power management and control circuits.
Application Areas
Switch-mode power supplies
Motor drives
Inverters
DC-DC converters
Industrial and consumer electronics
Product Lifecycle
The SUD23N06-31-GE3 is an actively supported product from Vishay/Siliconix. Replacements and upgrades may be available.
Key Reasons to Choose This Product
Excellent power efficiency due to low on-resistance
High current handling and thermal performance
Compact surface-mount package for space-constrained designs
Automotive-grade quality and reliability
Broad compatibility with various power electronic applications