Manufacturer Part Number
SQM120P10_10M1LGE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Transistor FET, MOSFET Single
Product Features and Performance
P-Channel MOSFET
Automotive grade, AEC-Q101 qualified
Trench technology
Low on-resistance
High current capability
High power dissipation
Product Advantages
Suitable for high-power, high-current applications
Excellent thermal performance
Reliable automotive-grade design
Key Technical Parameters
Drain to Source Voltage (Vdss): 100 V
Gate-Source Voltage (Vgs Max): ±20 V
On-resistance (Rds(on) Max): 10.1 mΩ @ 30 A, 10 V
Continuous Drain Current (Id): 120 A @ 25°C
Input Capacitance (Ciss Max): 9000 pF @ 25 V
Power Dissipation (Max): 375 W
Quality and Safety Features
Automotive-grade, AEC-Q101 qualified
High reliability and ruggedness
Compatibility
TO-263 (DPak) package
Surface mount
Application Areas
Automotive electronics
Industrial power conversion
Telecom power supplies
Industrial motor drives
Product Lifecycle
Active product
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent performance in high-power, high-current applications
Reliable automotive-grade design
Efficient thermal management
Compatibility with standard surface mount packaging
Availability of replacement and upgrade options
SQM120N10-3M8-GE3Electro-Films (EFI) / Vishay