Manufacturer Part Number
SQM200N04-1M1L_GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-Channel TrenchFET MOSFET with low on-resistance and high current capability.
Product Features and Performance
Extremely low on-resistance of 1.1 mΩ
High continuous drain current of 200 A
High power dissipation of 375 W
Wide operating temperature range of -55°C to 175°C
Low gate charge of 413 nC
Fast switching speed
Product Advantages
Excellent thermal performance
Compact and efficient power conversion
Supports high-current and high-power applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 40 V
Gate to Source Voltage (Vgs): ±20 V
On-Resistance (Rds(on)): 1.1 mΩ
Continuous Drain Current (Id): 200 A
Input Capacitance (Ciss): 20,655 pF
Power Dissipation (Pd): 375 W
Quality and Safety Features
RoHS3 compliant
Reliable and robust design
Rigorous quality control and testing
Compatibility
Compatible with a wide range of electronic systems and applications
Application Areas
Power supplies
Motor drives
Inverters
Battery chargers
Industrial and automotive electronics
Product Lifecycle
Currently in production
No known discontinuation or replacement plans
Key Reasons to Choose This Product
Exceptional performance in terms of low on-resistance, high current handling, and high power dissipation
Compact and efficient design
Reliable and durable for demanding applications
Broad operating temperature range
RoHS3 compliance for environmentally-friendly use
SQM120P06Electro-Films (EFI) / Vishay