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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single~~SQM120N10-3M8_GE3~~

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SQM120N10-3M8_GE3 - Vishay Siliconix

Manufacturer Part Number: SQM120N10-3M8_GE3

Manufacturer: Vishay / Siliconix

Allelco Part Number: 32D-SQM120N10-3M8_GE3

ECAD Model

Parts Description: MOSFET N-CH 100V 120A TO263

Detailed Description

Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Data sheet: SQM120N10-3M8.pdf

RoHs Status: ROHS3 Compliant

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In stock: 16731

Specifications

SQM120N10-3M8_GE3 Tech Specifications
Vishay Siliconix - SQM120N10-3M8_GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix - SQM120N10-3M8_GE3

Product Attribute	Attribute Value
Manufacturer	Vishay / Siliconix
Vgs(th) (Max) @ Id	3.5V @ 250µA
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
Supplier Device Package	TO-263 (D²Pak)
Series	Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs	3.8mOhm @ 20A, 10V
Power Dissipation (Max)	375W (Tc)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package	Tape & Reel (TR)

Product Attribute	Attribute Value
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Input Capacitance (Ciss) (Max) @ Vds	7230 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	190 nC @ 10 V
FET Type	N-Channel
FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	10V
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Base Product Number	SQM120

Parts Introduction

Manufacturer Part Number

SQM120N10-3M8_GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance N-Channel TrenchFET power MOSFET

Designed for high-power automotive and industrial applications

Product Features and Performance

Drain-to-Source Voltage (Vdss) of 100V

Extremely low on-resistance (Rds(on)) of 3.8mΩ

Maximum Continuous Drain Current (Id) of 120A at 25°C

Wide Operating Temperature Range of -55°C to 175°C

High Power Dissipation of 375W

Product Advantages

Excellent thermal efficiency

Robust and reliable for harsh environments

Superior switching performance

High current handling capability

Key Technical Parameters

Vgs (Max): ±20V

Vgs(th) (Max) @ Id: 3.5V @ 250A

Input Capacitance (Ciss): 7230 pF @ 25V

Gate Charge (Qg): 190 nC @ 10V

Quality and Safety Features

RoHS3 compliant

AEC-Q101 qualified for automotive applications

Compatibility

TO-263 (DPak) package

Surface mount design

Application Areas

High-power automotive electronics

Industrial motor drives

Power supplies

Inverters and converters

Product Lifecycle

Currently in production

Replacement or upgrade options available

Key Reasons to Choose

Exceptional performance and efficiency

Designed for demanding automotive and industrial applications

Robust and reliable construction

Wide operating temperature range

Easy to integrate into existing designs

Parts with Similar Specifications

The three parts on the right have similar specifications to Vishay Siliconix SQM120N10-3M8_GE3

Product Attribute
Part Number	SQM120N10-3M8_GE3	SQM120P06-07L_GE3	SQM120N06-3M5L_GE3	SQM200N04-1M1L_GE3
Manufacturer	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Rds On (Max) @ Id, Vgs	3.8mOhm @ 20A, 10V	6.7mOhm @ 30A, 10V	3.5mOhm @ 29A, 10V	1.1mOhm @ 30A, 10V
Package	Tape & Reel (TR)	Tape & Reel (TR)	Tape & Reel (TR)	Tape & Reel (TR)
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Base Product Number	SQM120	SQM120	SQM120	SQM200
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)
Supplier Device Package	TO-263 (D²Pak)	TO-263 (D²Pak)	TO-263	TO-263-7
Input Capacitance (Ciss) (Max) @ Vds	7230 pF @ 25 V	14280 pF @ 25 V	14700 pF @ 25 V	20655 pF @ 25 V
FET Type	N-Channel	P-Channel	N-Channel	N-Channel
FET Feature	-	-	-	-
Current - Continuous Drain (Id) @ 25°C	120A (Tc)	120A (Tc)	120A (Tc)	200A (Tc)
Power Dissipation (Max)	375W (Tc)	375W (Tc)	375W (Tc)	375W (Tc)
Vgs (Max)	±20V	±20V	±20V	±20V
Gate Charge (Qg) (Max) @ Vgs	190 nC @ 10 V	270 nC @ 10 V	330 nC @ 10 V	413 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On)	10V	4.5V, 10V	4.5V, 10V	4.5V, 10V
Drain to Source Voltage (Vdss)	100 V	60 V	60 V	40 V
Series	Automotive, AEC-Q101, TrenchFET®	TrenchFET®	Automotive, AEC-Q101, TrenchFET®	TrenchFET®
Vgs(th) (Max) @ Id	3.5V @ 250µA	2.5V @ 250µA	2.5V @ 250µA	2.5V @ 250µA

SQM120N10-3M8_GE3 Datasheet PDF

Download SQM120N10-3M8_GE3 pdf datasheets and Vishay Siliconix documentation for SQM120N10-3M8_GE3 - Vishay Siliconix.

Datasheets: SQM120N10-3M8.pdf
PCN Assembly/Origin: Process Change 11/Apr/2023.pdf

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