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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single~~SQM120N06-3M5L_GE3~~

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SQM120N06-3M5L_GE3 - Vishay Siliconix

Manufacturer Part Number: SQM120N06-3M5L_GE3

Manufacturer: Vishay / Siliconix

Allelco Part Number: 32D-SQM120N06-3M5L_GE3

ECAD Model

Parts Description: MOSFET N-CH 60V 120A TO263

Detailed Description

Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Data sheet: SQM120N06-3M5L-GE3.pdf

RoHs Status: ROHS3 Compliant

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In stock: 9093

Specifications

SQM120N06-3M5L_GE3 Tech Specifications
Vishay Siliconix - SQM120N06-3M5L_GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix - SQM120N06-3M5L_GE3

Product Attribute	Attribute Value
Manufacturer	Vishay / Siliconix
Vgs(th) (Max) @ Id	2.5V @ 250µA
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
Supplier Device Package	TO-263
Series	Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs	3.5mOhm @ 29A, 10V
Power Dissipation (Max)	375W (Tc)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package	Tape & Reel (TR)

Product Attribute	Attribute Value
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Input Capacitance (Ciss) (Max) @ Vds	14700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	330 nC @ 10 V
FET Type	N-Channel
FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Base Product Number	SQM120

Parts Introduction

Manufacturer Part Number

SQM120N06-3M5L_GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance power MOSFET designed for automotive and industrial applications

Product Features and Performance

N-channel TrenchFET power MOSFET

60V drain-source voltage rating

Very low on-resistance of 3.5mΩ at 29A, 10V

High continuous drain current of 120A at 25°C

Wide operating temperature range of -55°C to 175°C

High power dissipation of 375W at 25°C

Fast switching speed and low gate charge of 330nC at 10V

Product Advantages

Excellent efficiency and thermal performance

Robust design for demanding automotive and industrial applications

Compact DPak surface mount package

Key Technical Parameters

Drain-source voltage (Vdss): 60V

Gate-source voltage (Vgs): ±20V

On-resistance (Rds(on)): 3.5mΩ @ 29A, 10V

Drain current (Id): 120A continuous at 25°C

Input capacitance (Ciss): 14700pF @ 25V

Gate charge (Qg): 330nC @ 10V

Quality and Safety Features

AEC-Q101 qualified for automotive applications

RoHS3 compliant

Compatibility

Compatible with various industrial and automotive applications

Application Areas

Motor drives

Power supplies

Inverters

Converters

Industrial and automotive electronics

Product Lifecycle

Current product, no discontinuation or replacement planned

Key Reasons to Choose This Product

Excellent efficiency and thermal performance for demanding applications

Robust design and automotive qualification for reliable operation

Compact surface mount package for space-constrained designs

High power density and current capability

Fast switching speed and low gate charge for improved system efficiency

Parts with Similar Specifications

The three parts on the right have similar specifications to Vishay Siliconix SQM120N06-3M5L_GE3

Product Attribute
Part Number	SQM120N06-3M5L_GE3	SQM120N10-3M8_GE3	SQM120P06-07L_GE3	SQM120N04-1M9_GE3
Manufacturer	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix
Rds On (Max) @ Id, Vgs	3.5mOhm @ 29A, 10V	3.8mOhm @ 20A, 10V	6.7mOhm @ 30A, 10V	1.9mOhm @ 30A, 10V
FET Feature	-	-	-	-
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Package	Tape & Reel (TR)	Tape & Reel (TR)	Tape & Reel (TR)	Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs	330 nC @ 10 V	190 nC @ 10 V	270 nC @ 10 V	270 nC @ 10 V
Power Dissipation (Max)	375W (Tc)	375W (Tc)	375W (Tc)	300W (Tc)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs (Max)	±20V	±20V	±20V	±20V
FET Type	N-Channel	N-Channel	P-Channel	N-Channel
Series	Automotive, AEC-Q101, TrenchFET®	Automotive, AEC-Q101, TrenchFET®	TrenchFET®	TrenchFET®
Supplier Device Package	TO-263	TO-263 (D²Pak)	TO-263 (D²Pak)	TO-263 (D²Pak)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Current - Continuous Drain (Id) @ 25°C	120A (Tc)	120A (Tc)	120A (Tc)	120A (Tc)
Base Product Number	SQM120	SQM120	SQM120	SQM120
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss)	60 V	100 V	60 V	40 V
Input Capacitance (Ciss) (Max) @ Vds	14700 pF @ 25 V	7230 pF @ 25 V	14280 pF @ 25 V	8790 pF @ 25 V
Vgs(th) (Max) @ Id	2.5V @ 250µA	3.5V @ 250µA	2.5V @ 250µA	3.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	10V	4.5V, 10V	10V

SQM120N06-3M5L_GE3 Datasheet PDF

Download SQM120N06-3M5L_GE3 pdf datasheets and Vishay Siliconix documentation for SQM120N06-3M5L_GE3 - Vishay Siliconix.

Datasheets: SQM120N06-3M5L-GE3.pdf
PCN Part Number: New Ordering Code 19/Mar/2015.pdf
PCN Assembly/Origin: SIL-052-2014-Rev-1 15/Aug/2014.pdf

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America	Brazil	7
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