SQJQ900E-T1_GE3 - Vishay Siliconix

Manufacturer Part Number

SQJQ900E-T1_GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance dual N-channel TrenchFET MOSFET in a PowerPAK 8 x 8 Dual package

Product Features and Performance

Automotive, AEC-Q101 qualified

Optimized for high-frequency, high-efficiency switching applications

Low on-resistance (RDS(on)) for low power loss

Extremely low gate charge (Qg) for fast switching

High current handling capability up to 100A

Product Advantages

Excellent thermal performance

Compact, space-saving footprint

Reliable and robust design

Key Technical Parameters

Drain-to-Source Voltage (VDS): 40V

On-Resistance (RDS(on)): 3.9mΩ @ 20A, 10V

Continuous Drain Current (ID): 100A

Input Capacitance (Ciss): 5900pF @ 20V

Gate Threshold Voltage (VGS(th)): 2.5V @ 250A

Gate Charge (Qg): 120nC @ 10V

Quality and Safety Features

RoHS3 compliant

Designed and manufactured for high reliability and long lifespan

Compatibility

Suitable for a wide range of automotive and industrial applications

Application Areas

Automotive power management

Industrial motor drives

Switch-mode power supplies

Voltage regulators

Inverters and converters

Product Lifecycle

This product is currently in active production

Replacement or upgrade options may be available

Key Reasons to Choose This Product

Exceptional performance and efficiency

Robust and reliable design for demanding applications

Compact and space-saving package

Automotive-grade quality and reliability