Manufacturer Part Number
SQJQ466E-T1_GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel enhancement-mode power MOSFET
Designed for automotive and industrial applications
Product Features and Performance
Trench technology for low on-resistance
High avalanche energy rating
Excellent switching performance
Low gate charge for high-frequency operation
High-temperature operation up to 175°C
Product Advantages
Low on-resistance
Fast switching
High power density
High-temperature capability
Key Technical Parameters
Drain to Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 1.9mΩ @ 10A, 10V
Continuous Drain Current (Id): 200A @ 25°C
Input Capacitance (Ciss): 10210pF @ 25V
Power Dissipation (Ptot): 150W @ 25°C
Quality and Safety Features
AEC-Q101 qualified for automotive applications
RoHS3 compliant
Compatibility
Designed for automotive and industrial applications
Application Areas
Automotive systems (e.g., power steering, fuel pumps, electric windows)
Industrial motor drives
Power supplies
Inverters and converters
Product Lifecycle
Currently in production
Replacement or upgrade options available from Vishay/Siliconix
Key Reasons to Choose This Product
Low on-resistance for high efficiency
Fast switching for high-frequency operation
High power density for compact designs
Wide temperature range for demanding applications
Automotive and industrial grade quality and reliability