SQJB60EP-T1_GE3 - Vishay Siliconix

Manufacturer Part Number

SQJB60EP-T1_GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Products, Transistors - FETs, MOSFETs - Arrays

Product Features and Performance

2 N-Channel (Dual) configuration

Drain to Source Voltage (Vdss): 60V

Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V

Continuous Drain (Id) @ 25°C: 30A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V

Vgs(th) (Max) @ Id: 2.5V @ 250A

Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V

Product Advantages

Automotive, AEC-Q101, TrenchFET series

Wide operating temperature range (-55°C ~ 175°C)

High power rating of 48W

Surface mount package (PowerPAK SO-8 Dual)

Key Technical Parameters

Supplier Device Package: PowerPAK SO-8 Dual

Technology: MOSFET (Metal Oxide)

Manufacturer's packaging: PowerPAK SO-8 Dual

Package / Case: PowerPAK SO-8 Dual

Package: Tape & Reel (TR)

Quality and Safety Features

RoHS3 Compliant

Compatibility

Compatible with a wide range of automotive and industrial applications

Application Areas

Automotive

Industrial

Product Lifecycle

No information on discontinuation or availability of replacements/upgrades

Key Reasons to Choose This Product

Automotive, AEC-Q101, TrenchFET series for reliable performance

Wide operating temperature range (-55°C ~ 175°C) for demanding environments

High power rating of 48W for high-power applications

Surface mount package (PowerPAK SO-8 Dual) for compact design

RoHS3 Compliant for environmental compliance