Manufacturer Part Number
SQD50N10-8M9L_GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel TrenchFET power MOSFET for automotive and high-reliability applications.
Product Features and Performance
Wide operating temperature range: -55°C to 175°C
Low on-resistance: 8.9 mΩ
High continuous drain current: 50A
High power dissipation: 136W
Low gate charge: 70 nC
AEC-Q101 qualified for automotive applications
Product Advantages
Excellent thermal performance
High reliability
Low power losses
Compact and efficient design
Key Technical Parameters
Drain-source voltage (Vdss): 100V
Gate-source voltage (Vgs): ±20V
Continuous drain current (Id): 50A
On-resistance (Rds(on)): 8.9 mΩ
Input capacitance (Ciss): 2950 pF
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
Suitable for various power conversion and control applications
Application Areas
Automotive electronics
Industrial power supplies
Motor drives
Switching power supplies
Product Lifecycle
This product is an active and ongoing part of Vishay's portfolio.
Replacement or upgrade options may be available from Vishay or other manufacturers.
Key Reasons to Choose This Product
Excellent thermal and electrical performance
High reliability for demanding applications
Compact and efficient design
Automotive and high-reliability qualification
Ongoing product support and availability
SQD50P04-09L-GE3Electro-Films (EFI) / Vishay