Manufacturer Part Number
SQD50N06-09L_GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product, Transistors - FETs, MOSFETs - Single
Product Features and Performance
N-Channel MOSFET
60V Drain to Source Voltage
50A Continuous Drain Current
9mOhm On-Resistance
3065pF Input Capacitance
72nC Gate Charge
-55°C to 175°C Operating Temperature
Surface Mount Package
Product Advantages
High Efficiency
Low On-Resistance
High Current Handling Capability
Wide Operating Temperature Range
Compact Surface Mount Package
Key Technical Parameters
Drain to Source Voltage: 60V
Gate to Source Voltage: ±20V
On-Resistance: 9mOhm
Continuous Drain Current: 50A
Input Capacitance: 3065pF
Gate Charge: 72nC
Power Dissipation: 136W
Quality and Safety Features
RoHS3 Compliant
TO-252AA Package
Compatibility
Compatible with a wide range of electronic circuits and applications
Application Areas
Power Supplies
Motor Drives
Industrial Controls
Automotive Electronics
Telecommunications Equipment
Product Lifecycle
Currently in production, no indication of discontinuation. Replacement or upgrade options available from the manufacturer.
Key Reasons to Choose This Product
High efficiency and low on-resistance for improved performance
High current handling capability for demanding applications
Wide operating temperature range for use in diverse environments
Compact surface mount package for space-constrained designs
Compliance with RoHS3 standards for environmental responsibility
SQD50P04-09LElectro-Films (EFI) / Vishay