Manufacturer Part Number
SQD50P04-09L_GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product, Transistors - FETs, MOSFETs - Single
Product Features and Performance
ROHS3 Compliant
TO-252AA Package
TrenchFET Series
Tape & Reel Packaging
Operating Temperature: -55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 17A, 10V
MOSFET (Metal Oxide) Technology
Continuous Drain Current (Id) @ 25°C: 50A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6675 pF @ 20 V
Power Dissipation (Max): 136W (Tc)
P-Channel FET Type
Vgs(th) (Max) @ Id: 2.5V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Surface Mount Mounting Type
Product Advantages
High current handling capability
Low on-resistance
High power dissipation
Suitable for a wide range of applications
Key Technical Parameters
Drain to Source Voltage (Vdss)
Gate to Source Voltage (Vgs)
On-resistance (Rds on)
Continuous Drain Current (Id)
Input Capacitance (Ciss)
Power Dissipation (Pd)
Gate Charge (Qg)
Quality and Safety Features
ROHS3 Compliant
Suitable for high-temperature operation
Compatibility
Can be used in a wide range of electronic devices and power control applications
Application Areas
Power supplies
Motor drives
Inverters
Switching regulators
General-purpose power control
Product Lifecycle
Currently in production
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
High current handling and power dissipation capabilities
Low on-resistance for efficient power transfer
Suitable for high-temperature operation
Versatile for a wide range of power control applications
Availability in industry-standard packaging
SQD50P03-07-GE3Electro-Films (EFI) / Vishay