SQ3427AEEV-T1_GE3 - Vishay Siliconix

Manufacturer Part Number

SQ3427AEEV-T1_GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

Single Transistor FET, MOSFET

Product Features and Performance

Automotive, AEC-Q101, TrenchFET Series

P-Channel MOSFET

Drain to Source Voltage (Vdss): 60 V

Vgs (Max): ±20 V

Rds On (Max) @ Id, Vgs: 95 mOhm @ 4.5 A, 10 V

Current Continuous Drain (Id) @ 25°C: 5.3 A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V

Power Dissipation (Max): 5 W (Tc)

Vgs(th) (Max) @ Id: 2.5 V @ 250 A

Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V

Product Advantages

Automotive-grade reliability

High power density

Low on-resistance

Fast switching

Key Technical Parameters

Technology: MOSFET (Metal Oxide)

FET Type: P-Channel

Drive Voltage (Max Rds On, Min Rds On): 10 V

Operating Temperature: -55°C ~ 175°C (TJ)

Mounting Type: Surface Mount

Quality and Safety Features

ROHS3 Compliant

Compatibility

Package / Case: SOT-23-6 Thin, TSOT-23-6

Supplier Device Package: 6-TSOP

Manufacturer's packaging: 6-TSOP

Package: Tape & Reel (TR)

Application Areas

Automotive electronics

Power management

Industrial controls

Product Lifecycle

Current product, no discontinuation or replacement known

Several Key Reasons to Choose This Product

Automotive-grade reliability for harsh environments

High power density and low on-resistance for efficient power conversion

Fast switching for high-frequency applications

Surface mount packaging for easy integration