Manufacturer Part Number
SQ3426EV-T1_GE3
Manufacturer
Vishay / Siliconix
Introduction
This product is a discrete semiconductor device, specifically a single MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) transistor.
Product Features and Performance
N-Channel MOSFET
60V Drain-to-Source Voltage
42mΩ (max) On-Resistance at 5A, 10V
7A (Tc) Continuous Drain Current
720pF (max) Input Capacitance at 30V
5W (Tc) Power Dissipation
-55°C to 175°C Operating Temperature Range
Product Advantages
Automotive-grade AEC-Q101 qualification
Suitable for applications requiring high efficiency and low power loss
Compact SOT-23-6 surface mount package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
Gate-to-Source Voltage (Vgs): ±20V
Threshold Voltage (Vgs(th)): 2.5V (max) at 250μA
On-Resistance (Rds(on)): 42mΩ (max) at 5A, 10V
Drain Current (Id): 7A (Tc)
Quality and Safety Features
RoHS3 compliant
Tape and reel packaging
Compatibility
This MOSFET is compatible with a wide range of electronic circuits and systems that require a high-performance, automotive-grade switching device.
Application Areas
Automotive electronics
Industrial controls
Power supplies
Motor drives
Switching circuits
Product Lifecycle
This product is an active, currently available part. There are no immediate plans for discontinuation, and replacement options or upgrades may become available in the future.
Key Reasons to Choose This Product
Robust automotive-grade AEC-Q101 qualification
Low on-resistance for high efficiency and low power loss
Wide operating temperature range of -55°C to 175°C
Compact surface mount package for space-constrained designs
RoHS3 compliance for environmental responsibility