Manufacturer Part Number
SQ3426EEV-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single N-Channel MOSFET Transistor
Product Features and Performance
60 V Drain-to-Source Voltage
42 mOhm Maximum On-Resistance @ 5 A, 10 V
7 A Continuous Drain Current @ 25°C
700 pF Maximum Input Capacitance @ 30 V
5 V Maximum Gate Threshold Voltage @ 250 μA
12 nC Maximum Gate Charge @ 4.5 V
Product Advantages
Efficient power switching performance
Compact surface-mount package
Suitable for a wide range of power management applications
Key Technical Parameters
MOSFET Technology
N-Channel FET Type
SOT-23-6 Thin, TSOT-23-6 Package
Quality and Safety Features
RoHS3 Compliant
Compatibility
Suitable for various power management and control applications
Application Areas
Power supplies
Motor drives
Lighting control
Battery charging circuits
General purpose power switching
Product Lifecycle
Currently available
No known discontinuation plans
Several Key Reasons to Choose This Product
Excellent power switching performance with low on-resistance
Compact and space-efficient surface-mount package
Wide range of power management applications supported
RoHS3 compliance for eco-friendly use
Suitable for cost-effective power switching solutions