Manufacturer Part Number
SIS488DN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance n-channel enhancement-mode power MOSFET in a compact PowerPAK 1212-8 package.
Product Features and Performance
Extremely low on-resistance for high efficiency
Fast switching for high-frequency applications
Optimized for PWM, load switching, and battery charging
Product Advantages
Compact package size
Low on-resistance
High switching speed
Efficient power handling
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 40V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 5.5mΩ @ 20A, 10V
Continuous Drain Current (Id): 40A @ 25°C
Input Capacitance (Ciss): 1330pF @ 20V
Power Dissipation: 3.7W @ Ta, 52W @ Tc
Threshold Voltage (Vgs(th)): 2.2V @ 250A
Drive Voltage: 4.5V (max Rds(on)), 10V (min Rds(on))
Gate Charge (Qg): 32nC @ 10V
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Compatible with various high-frequency, high-current power applications
Application Areas
PWM circuits
Load switching
Battery charging
High-frequency power conversion
Product Lifecycle
Currently available
No plans for discontinuation
Key Reasons to Choose This Product
Exceptional power efficiency due to ultra-low on-resistance
High-speed switching for improved system performance
Compact package size for space-constrained designs
Reliable and robust construction for long-term operation
Versatile compatibility with a wide range of power applications