SIS478DN-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SIS478DN-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

N-channel TrenchFET power MOSFET with ultra-low on-resistance in the PowerPAK 1212-8 package.

Product Features and Performance

Extremely low on-resistance for high efficiency

Fast switching for high-frequency applications

Rugged and reliable performance

Compact and thermally efficient PowerPAK 1212-8 package

Product Advantages

Excellent thermal performance

High power density

High switching speed

Robust design

Key Technical Parameters

Drain to Source Voltage (Vdss): 30 V

Vgs (Max): ±25 V

Rds On (Max) @ Id, Vgs: 20 mOhm @ 8 A, 10 V

Continuous Drain Current (Id) @ 25°C: 12 A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 398 pF @ 15 V

Power Dissipation (Max): 15.6 W (Tc)

Vgs(th) (Max) @ Id: 2.5 V @ 250 A

Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V

Quality and Safety Features

RoHS3 compliant

Robust and reliable design

Compatibility

Surface mount technology (SMT) compatible

Suitable for high-frequency, high-efficiency power conversion applications

Application Areas

Switch-mode power supplies

Motor drives

DC/DC converters

Lighting ballasts

Industrial and consumer electronics

Product Lifecycle

This product is currently in production and not nearing discontinuation

Replacement or upgrade options are available

Key Reasons to Choose This Product

Extremely low on-resistance for high efficiency

Fast switching for high-frequency applications

Compact and thermally efficient PowerPAK 1212-8 package

Rugged and reliable performance

Excellent thermal management

High power density

Robust design