SIS476DN-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SIS476DN-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance N-channel power MOSFET in PowerPAK 1212-8 package for efficient power conversion and control applications.

Product Features and Performance

Trench MOSFET technology for low on-resistance and high-efficiency power conversion

Low gate charge and fast switching for improved efficiency

High current capability up to 40A

Wide operating temperature range from -55°C to 150°C

Product Advantages

Excellent thermal performance due to compact PowerPAK 1212-8 package

Reduced power losses and higher efficiency compared to traditional MOSFET packages

Reliable and robust design for demanding applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 30V

Maximum Gate-to-Source Voltage (Vgs): +20V/-16V

On-Resistance (Rds(on)): 2.5mΩ @ 15A, 10V

Continuous Drain Current (Id): 40A @ 25°C (Tc)

Input Capacitance (Ciss): 3595pF @ 15V

Power Dissipation: 3.7W (Ta), 52W (Tc)

Quality and Safety Features

RoHS3 compliant

Suitable for industrial, automotive, and other high-reliability applications

Compatibility

Compatible with a wide range of power conversion and control circuits

Application Areas

Switch-mode power supplies

Motor drives

Lighting control

Industrial and automotive electronics

Product Lifecycle

Currently in production

Replacement or upgrade options available from Vishay/Siliconix

Key Reasons to Choose This Product

High efficiency and low power losses for improved system performance

Compact and thermally efficient PowerPAK 1212-8 package

Reliable and robust design for demanding applications

Broad operating temperature range for versatile use

Compatibility with a wide range of power electronics circuits