Manufacturer Part Number
SIR470DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel TrenchFET power MOSFET
Product Features and Performance
Low on-resistance for high efficiency
Optimized for synchronous rectification and high-frequency switching
Suitable for high-current, high-frequency applications
Fast switching and low gate charge for high-efficiency power conversion
Rugged design with ultra-low on-resistance
Product Advantages
Improved energy efficiency
Reduced power dissipation
Enhanced reliability and longer lifespan
Key Technical Parameters
Drain to Source Voltage (Vdss): 40V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Current Continuous Drain (Id) @ 25°C: 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5660 pF @ 20 V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Designed for surface mount applications
Compatible with PowerPAK SO-8 package
Application Areas
Synchronous rectification
High-frequency switching
High-current power conversion
Industrial, consumer, and automotive electronics
Product Lifecycle
Current production model
Replacements and upgrades available as technology advances
Key Reasons to Choose This Product
Excellent energy efficiency through low on-resistance
Reliable and durable design for long-term use
Optimized for high-frequency, high-current applications
Compatibility with standard surface mount package
RoHS3 compliance for environmental and safety considerations
SIR470DP-T1-GE3 MOSElectro-Films (EFI) / Vishay