Manufacturer Part Number
SIR468DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single Transistor MOSFET
Product Features and Performance
ROHS3 Compliant
PowerPAK SO-8 Package
Surface Mount Mounting
TrenchFET Series
Tape & Reel Packaging
Wide Operating Temperature Range: -55°C to 150°C
High Drain to Source Voltage: 30V
Wide Gate to Source Voltage Range: ±20V
Low On-Resistance: 5.7mOhm @ 20A, 10V
High Continuous Drain Current: 40A @ 25°C
High Input Capacitance: 1720pF @ 15V
High Power Dissipation: 5W (Ta), 50W (Tc)
N-Channel MOSFET
Low Threshold Voltage: 3V @ 250A
Product Advantages
Efficient power conversion
High power density
Reliable performance
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Gate to Source Voltage (Vgs Max): ±20V
On-Resistance (Rds On Max): 5.7mOhm @ 20A, 10V
Continuous Drain Current (Id): 40A @ 25°C
Input Capacitance (Ciss Max): 1720pF @ 15V
Power Dissipation (Max): 5W (Ta), 50W (Tc)
Threshold Voltage (Vgs(th) Max): 3V @ 250A
Quality and Safety Features
ROHS3 Compliant
Compatibility
Compatible with various power electronics and control applications
Application Areas
Power conversion
Motor control
Lighting
Industrial automation
Automotive electronics
Product Lifecycle
Current product, no known discontinuation
Key Reasons to Choose
Efficient power conversion
High power density
Reliable performance
Wide operating temperature range
Low on-resistance
High current and power handling
SIR466DP-T1-GE3 MOSElectro-Films (EFI) / Vishay