Manufacturer Part Number
SIR472DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-Channel TrenchFET power MOSFET
Product Features and Performance
Low on-resistance for high efficiency
Fast switching speed
High current capability
Wide temperature range operation (-55°C to 150°C)
Suitable for high-frequency, high-power applications
Product Advantages
Excellent thermal performance
High power density
Reliable operation
Easy to drive
Key Technical Parameters
Drain to Source Voltage (Vdss): 30 V
Maximum Gate-Source Voltage (Vgs(max)): ±20 V
On-Resistance (Rds(on)): 12 mΩ @ 13.8 A, 10 V
Continuous Drain Current (Id): 20 A @ 25°C (Tc)
Input Capacitance (Ciss): 820 pF @ 15 V
Power Dissipation (Max): 3.9 W (Ta), 29.8 W (Tc)
Quality and Safety Features
RoHS3 compliant
Suitable for high-frequency, high-power applications
Compatibility
Designed for surface mount assembly
Application Areas
Switch-mode power supplies
Motor drives
Lighting applications
Automotive electronics
Product Lifecycle
This product is an active, in-production part. Replacements and upgrades may be available.
Key Reasons to Choose This Product
Excellent thermal performance and high power density for efficient power conversion
Fast switching speed and high current capability for high-frequency, high-power applications
Reliable operation and easy drive characteristics
Wide temperature range for use in demanding environments