Manufacturer Part Number
SIR418DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
ROHS3 Compliant
PowerPAK SO-8 Package
Operating Temperature: -55°C to 150°C
Drain to Source Voltage (Vdss): 40V
Gate to Source Voltage (Vgs) Max: ±20V
On-Resistance (Rds On) Max: 5mOhm @ 20A, 10V
MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) Technology
Continuous Drain Current (Id) Max: 40A @ 25°C
Input Capacitance (Ciss) Max: 2410pF @ 20V
Power Dissipation Max: 39W @ Tc
Product Advantages
Excellent on-resistance performance
High current handling capability
Compact PowerPAK SO-8 package
Key Technical Parameters
Vgs(th) Max: 2.4V @ 250A
Drive Voltage: 4.5V (Max Rds On), 10V (Min Rds On)
Gate Charge (Qg) Max: 75nC @ 10V
Quality and Safety Features
ROHS3 Compliant
Compatibility
Surface Mount Mounting
Application Areas
Suitable for a wide range of power management and control applications
Product Lifecycle
Currently available, no information on discontinuation or replacement
Key Reasons to Choose
High performance MOSFET with low on-resistance
Excellent current handling capability
Compact and efficient PowerPAK SO-8 package
Suitable for diverse power management applications