SIR416DP-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SIR416DP-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

Single Transistor FET, MOSFET

Product Features and Performance

MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)

N-Channel

TrenchFET Series

Drain to Source Voltage (Vdss): 40 V

Vgs (Max): ±20 V

On-Resistance (Rds On): 3.8 mOhm @ 15 A, 10 V

Continuous Drain Current (Id): 50 A @ 25°C

Input Capacitance (Ciss): 3350 pF @ 20 V

Power Dissipation: 5.2 W (Ta), 69 W (Tc)

Gate Charge (Qg): 90 nC @ 10 V

Operating Temperature: -55°C to 150°C (TJ)

Product Advantages

Low on-resistance for improved efficiency

High current handling capability

High power density

Wide operating temperature range

Key Technical Parameters

Vdss: 40 V

Vgs (Max): ±20 V

Rds On (Max): 3.8 mOhm @ 15 A, 10 V

Id (Continuous): 50 A @ 25°C

Ciss: 3350 pF @ 20 V

Power Dissipation: 5.2 W (Ta), 69 W (Tc)

Qg: 90 nC @ 10 V

Operating Temperature: -55°C to 150°C (TJ)

Quality and Safety Features

RoHS3 Compliant

Moisture Sensitivity Level (MSL): 1 (unlimited floor life)

Compatibility

Compatible with various electronic circuits and systems requiring high-performance, high-efficiency power switching

Application Areas

Power supplies

Motor drives

Inverters

Converters

Industrial and automotive electronics

Product Lifecycle

Currently in production

Availability of replacements and upgrades may vary, depending on market conditions and Vishay's product roadmap

Key Reasons to Choose This Product

Excellent performance with low on-resistance and high current handling

Compact and efficient design with high power density

Wide operating temperature range for versatile applications

High reliability and quality with RoHS3 compliance

Compatibility with a wide range of electronic systems and circuits