Manufacturer Part Number
SIR414DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
N-Channel MOSFET Transistor
Product Features and Performance
Trench MOSFET technology
High current handling capability (50A continuous)
Low on-resistance (2.8 mOhm max)
Fast switching speed
High power dissipation (5.4W max)
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Efficient power conversion and control
Compact size and surface mount package
Reliable and robust performance
Key Technical Parameters
Drain-Source Voltage (Vdss): 40V
Gate-Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 50A
On-Resistance (Rds(on)): 2.8 mOhm max
Input Capacitance (Ciss): 4750 pF max
Gate Charge (Qg): 117 nC max
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering
Compatibility
Compatible with various electronic applications requiring high power switching
Application Areas
Power supplies
Motor drives
Industrial controls
Automotive electronics
Product Lifecycle
Current product, no discontinuation planned
Replacements and upgrades may be available
Key Reasons to Choose This Product
Excellent power handling and efficiency
Compact and surface mount package
Reliable and robust performance
Wide operating temperature range
Compliance with industry standards